Thin Solid Films, Vol.318, No.1-2, 52-56, 1998
Simulation of atomic-scale surface migration in homoepitaxial growth using embedded-atom method potentials for gold
Surface adsorption and surface diffusion are simulated by use of molecular dynamics method and N-body embedded-atom method (EAM) potential for gold. The relation between the growth rate of thin films and the packing density of atoms using Monte Carlo simulation is obtained. The results of the molecular dynamics method and the Monte Carlo method were combined, so that the growth process of thin films at elevated temperatures, which is too long to calculate, can be studied.