Thin Solid Films, Vol.318, No.1-2, 172-176, 1998
The growth of metallic multilayers on semiconductor substrates and in-situ optical monitoring: The case of Co/Cu on silicon with Pb impurity
The growth of Co/Cu multilayers on Si(111) substrates has been studied with metal silicides as the initial buffer layers. Epitaxial growth has been observed. The variation in optical reflectance during growth was investigated in situ. The experimental reflectance data were found to agree well with the prediction of a numerical simulation. In this work, focus is centred on the effects of small amounts of Pb impurity on the optical reflectance, magnetisation and the magneto-transport behaviour of the multilayers.