The deposition rare of amorphous silicon of the order of 0.9 mu m/h, has been obtained using a gas mixture of 10% silane (SiH4) in hydrogen (H-2). with a RF source of 13.56 MHz. Best films were deposited at a coral flow rate of 100-200 seem, 300 degrees C substrate temperature, 66.7 Pa, and RF power density of 150 mW/cm(2). The geometrical configuration of the reaction chamber included a gas injector that was specially designed for this purpose. Films were characterized by Fourier transform infrared (FTIR), secondary ion mass spectrometry (SIMS), and profilometer. In addition, thick p-i-n diodes were prepared and characterized, obtaining reverse current densities lower than 5 x 10(-6) A/cm(2) at full depletion.