Chemical vapor deposition of TiSi2 film on silicon film as thin as 97 Angstrom was demonstrated using a gas mixture of TiCl4, SiH4, SiH2Cl2, and H-2. Selective deposition was observed on 97-180 Angstrom evaporated Si film and on SOI films with 220-450 Angstrom Si. On SOI film, transition of silicide to low resistance phase occurred at 26-28 s of deposition, as indicated by the resistance change. Silicide film was 650-700 Angstrom after a 35-s deposition. The Auger depth profile showed uniform film composition. Silicide film was also selectively deposited on polysilicon lines formed on SOI wafer. Transition to low resistance phase occurred also at 26-28 s in both 0.5 and 5 mu m polysilicon lines. Silicide films formed on SOI structure were stable at 850 degrees C. Films formed on polysilicon lines showed resistance increase when the deposition time was shorter. Phosphorus and BF2 implantation caused resistance increase in CVD silicide films. A subsequent RTA anneal restored the resistance to a value lower than 5 Ohm/sq.