Photosensitive thin films of binary and ternary phase semiconductors have been deposited on metallic substrates by non-catalytic displacement plating (NCDP). Various preparative parameters are optimized for deposition of CdSe, CdTe and ZnCdSe on Zn and Ti substrates. Bandgap of Zn(1-x)CdxSe has been tailored from 1.68 to 2.53 eV for various Zn/Cd molar ratios. Photoelectrodes thus prepared are found to yield a short circuit current up to 2 mA and an open circuit voltage up to 0.45 V in S2-/S-2(2-) electrolyte.