The optical, electrical, and structural quality of epitaxial Si/Si1-xGex/Si layers has been studied as a function of growth temperature and layer deposition sequence. The epitaxial layers were grown by reduced pressure chemical vapor deposition in an ASM Epsilon-One reactor developed for production applications. The high material quality of both undoped and p-type modulation-doped Si/Si1-xGex/Si heterostructures which were grown without a growth interruption of more than 30 s is indicated by sharp and intense Si1-xGex photoluminescence with a FWHM of 6-10 meV for the no-phonon lines. Long growth interruptions, e.g. to change growth temperature between layer deposition, resulted in a reduced luminescence. However, this recovers after annealing the samples in a H-2-plasma at 400 degrees C for 30 min, which indicates that non-radiative recombination centers are grown-in during epitaxial growth. The electrical quality of epitaxial Si/Si1-xGex layers has been characterized by measuring the hole mobility of modulation doped samples at 4 K. Very high hole mobilities up to 8616 cm(2)/Vs at hole densities of 6.5 x 10(11) cm(-1) were measured. The hole mobility did not depend on epitaxial growth temperature down to 625 degrees C. Further, the growth sequence and subsequent thermal treatments after the growth did not have any negative influence on the high electrical quality of the epitaxial films.