A uniform, low-temperature, and high-density microwave plasma (2.45 GHz) is produced without magnetic field, utilizing a spokewise antenna. The plasma maintains a uniform state in Ar low pressure of several 10 mTorr with high electron density, >10(11) cm(-3), and a temperature Less than 2.5 eV within +/-6% over 16 cm in diameter. Highly crystallized and photoconductive, hydrogenated microcrystalline silicon (mu c-Si:H) film is produced from dichlorosilane (SiH:Cl-2), H-2 and Ar mixture at high deposition rate of mon than 5 Angstrom/s. This low-temperature and high-density microwave plasma source has a high potential not only for etching but for future large-area film deposition processes.