We used an in situ ellipsometer to measure the temperature-dependent growth curves, which are Delta versus psi curves measured in real time, of the Au thin-films deposited under identical conditions, with the exception of dir substrate temperature, for 240 s on thermally oxidized Si wafers by magnetron sputtering. The growth curves measured at substrate temperatures of 50, 100, 150, and 200 degrees C, respectively, exhibited distinctive temperature-dependent trajectories; as we raised the substrate temperature, the radius of curvature increased. We were able to analyze the temperature dependent variation of ellipsometric constants by introducing a growth model such that the void fraction decreased as a function of thickness, and also using the results of spectroscopic ellipsometry analysis. We found that the remnant void fraction, the void fraction decrease rate, and the depolarization factor are the major parameters that govern the observed temperature dependence of growth curves.