The dependence of the deposition rate of Mg thin films on a DC bias using RF-DC coupled magnetron sputtering was investigated. When an extremely low RF power (5 W) and DC bias were applied simultaneously to the target, the glow discharge took place at a low DC bias of -30 V whose Value was obtained about one-fifth of the conventional DC magnetron sputtering case. Mg films have been prepared at the RF power value of 5 W and the DC bias voltage values of -50- -200 V. The obtained values of the deposition rate Varied from 9-62 nm/min. It is shown that the film growth coefficient (deposition rate/ion current density) of ME films is significantly influenced by the target DC bias.