The influence of annealing processes on the CuInSe2(CIS) films prepared by pulsed laser deposition (PLD) has been investigated. The CIS films deposited on Coming 7059 glasses at various substrate temperatures were accepted annealing. The composition of annealed films was Cu-rich and no significant loss of selenium was observed. The X-ray diffraction patterns of the films were drastically changed after annealing the films deposited at room temperature. The post annealing process brings high orientation with the (112) plane of the chalcopyrite structure along the substrate surface. The compositional depth profile of the films was also changed after annealing. The growth of Cu-rich surface layer was observed. The liquid(CuxSe)-solid(CIS) growth mechanism was suggested and the CIS grain growth was enhanced.