Highly conductive and transparent ZnO thin films were prepared from zinc acetylacetonate (Zn(C5H7O2)(2)) and ozone by atmospheric pressure CVD. X-ray diffraction results show that all deposited films were polycrystalline in nature with (002) preferred orientation. The resistivity of the films critically depends on the ozone generation rate and changes in a range of 10(0)-10(-2) Ohm cm. The films with a resistivity of 0.018 Ohm cm and a Hall mobility of 14 cm(2)/V s could be deposited at a substrate temperature of 425 degrees C.