A low pressure chemical vapour deposition (LPCVD) reactor was transformed into an inductively coupled plasma like plasma enhanced chemical vapour deposition reactor by placing a coil at the inlet side of the tube and applying 13.56 MHz power to it. Silicon nitride films were deposited at 300 degrees C in the plasma region, or at 720 degrees C at the center of the tube, either without plasma or with a remote plasma. The films deposited in the plasma region have a high deposition rate, more than 2.5 times that of the deposition rate of films deposited without plasma. Their refractive index ranges from 1.5-1.8, increasing with the ammonium to dichlorosilane ratio, indicating a nitrogen rich film. Fourier Transform Infrared Spectroscopy shows that at the higher ammonium to dichlorosilane ratios, the number of Si-H bonds is as low as for stoichiometric silicon nitride. Etching these films in 2% HF results in high etch rates, 2-30 nm/s. The wafers deposited at 720 degrees C with remote plasma show an increased deposition rate, compared to films deposited without plasma, and refractive index of approximately 2.00.