Thin Solid Films, Vol.343-344, 354-360, 1999
In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy
In situ observation by photoelectron spectroscopy using synchrotron radiation was performed to investigate the species and coverage of surface adsorbates while exposing the high-temperature Si(001) surface to SiH2Cl2 atmosphere. Photoelectron spectra of valence bands made it possible to evaluate the clean surface area with dimer dangling bonds (Si-db). Curve-fitting analysis of Si 2p spectra showed that the chlorine adsorption species is only monochloride (Si-CI) in the whole temperature region from room temperature to similar to 700 degrees C examined. From comparison between the surface coverages of Si-db and Si-CI in connection with the 2 x 1 structure of the SiH2Cl2-adsorbed Si(001) surface as observed by reflection high energy electron diffraction, we assigned the hydrogen adsorption state to be dominantly monohydride (Si-H). The temperature dependencies of the surface coverages obtained for Si-CI, Si-H and Si-db are discussed using a surface reaction model of SiH2Cl2 adsorption.
Keywords:MOLECULAR-BEAM EPITAXY;ATOMIC LAYER EPITAXY;DESORPTION-KINETICS;SI(100) SURFACE;DECOMPOSITION;ADSORPTION;SILICON;CHLORINE;DICHLOROSILANE;SI(111)-(7X7)