We describe the homoepitaxial growth of ZnTe at room temperature using synchrotron radiation as a light source. The growth was carried out at a very low pressure of similar to 10(-5) Torr using diethylzinc (DEZn) and diethyltelluride (DETe) as source materials. The growth rate of ZnTe increases with increasing the transport rate and then it eventually becomes saturated for each source. The value of the DEZn transport rate at which the growth rate begins to saturate is much lower than that of the DETe transport rate. The epitaxial film of ZnTe with relatively smooth surface is obtained even at a relatively high growth rate of 0.13 Angstrom/mA min corresponding to around 0.12 mu m/h when the transport rate ratio of DETe to DEZn is as high as 15. The photoluminescence from the films deposited by synchrotron-excited growth has been observed for the first time.