Doping and electrical characteristics of in situ heavily B-doped Si1-xGex (0.15 < x < 0.80) films epitaxially grown on Si(100) were investigated. The epitaxial growth was carried out at 550 degrees C in a SiH4-GeH4-B2H6-H-2 gas mixture by using an ultraclean hot-wall low pressure chemical vapor deposition (LPCVD) system. With increasing B2H6 partial pressure, the deposition rate decreased only at the higher GeH4 partial pressure, and the B concentration (C-B) in the film increased proportionally up to 10(22) cm(-3). The Ge fraction scarcely changed with the B2H6, addition. The carrier concentration was nearly equal to C-B UP to about 2 x 10(20) cm(-3), and it tended to be saturated at around 5 x 10(20) cm(-3) at C-B

Keywords:DEPOSITION;SILICON