Molecular dynamics simulations have been carried out to model the implantation of boron into silicon at low energies using boron difluoride. It is shown that at a molecular impact energy of 460 eV the implantation profiles have an orientation dependence with penetration of the boron furthest when the F atoms are aligned perpendicular to the surface, The simulations also predict maximum damage in the surface layer where a peak in the fluorine atoms also occurs. The boron distribution is flatter with a peak which is deeper at: 10-15 Angstrom.