Some mixed metal oxide thin films were deposited by means of plasma CVD with metal beta-diketonates and titanium tetraisopropoxide [TTIP] as precursors. Yttria stabilized zirconia (YSZ) as a solid electrolyte and BaTiO3 and SrTiO3 as dielectric materials were easily obtained. During the mixed oxides thin films deposition process, beta-diketonates of group 2 and 3 elements which were used as precursors were easily dissociated to respective constituents. Otherwise, when acetylacetonato zirconium [Zr(acac)(4)] or TTIP was added into the microwave oxygen plasma, ZrO2 or TiO2 would be formed in the plasma. The intermediate species prepared in the plasma deposited on the substrate and crystallized on the substrate surface.