Raman spectroscopy was used to investigate the effect of nitrogen pressure on the structure of carbon-nitride films deposited by the reactive ionized cluster beam (RICB) technique. It is noted that a peak centered at about 1248 cm(-1) emerges in the Raman spectra and becomes more pronounced when nitrogen pressure is increased. This peak can be attributed to the covalent N-C single bonds. Moreover, the structure of the deposited films changes from DLC to diamond, and finally to carbon-nitride with the increase of nitrogen pressure. The results of Knoop hardness tests show the films have rather high hardness up to 6200 kg f/mm(2).