Crystalline structure-induced effects on the ferroelectric and dielectric properties in electron-beam deposited PZT thin films are described, TiO2 dispersion in PZT reduces dielectric constant and charge storage density to 400 and 5.4 mu C/cm(2) and increases dissipation factor. Pyrochlore PZT inclusions cause further reduction to 60 and 77 nC/cm(2) but have no effect on microscopic polarization, Wide variation in relaxation times below 220 degrees C and Debye-like relaxation process above 220 degrees C is the characteristics behavior of TiO2 mixed PZT films. A relaxation time constant of approximate to 10(-11) s with activation energy of 0.38 eV is observed in TiO2 mixed PZT. Inclusion of pyrochlore phase causes high time constant of relaxation process approximate to 4.2 mu s and large dissipation factor.