Metal incorporated carbon films (Me-C:H) were deposited using a new technique with two W screen grids incorporated inside an electron cyclotron resonance chemical vapour deposition (ECR-CVD) chamber. This technique is versatile when applied to the deposition of Me-C:H films as the degree of plasma ionisation, the sputtering rate of the metal grids and the energy of the impinging ions can be independently controlled. In this work, the proposed technique is demonstrated through W-C:H deposition at different flow ratios of CH4 to Ar. A DC bias of - 330V was applied to the upper and lower grids with either the substrate floating or under direct DC bias. The films were characterised in terms of their conductivity, atomic concentration (RBS), atomic configuration(XPS and XRD), hardness and optical absorption. The resistivities and the optical gaps of the films were noted to decrease drastically upon incorporation of several atomic percentage of W. WC formation is only observed for films deposited with the substrate under direct DC bias.