Dielectric thin films of Pb0.72La0.28Ti0.93O3 (PLT(28)) have been deposited on Pt/Ti/SiO2/Si substrates in situ by a laser ablation at a low temperature of 450 degrees C. We have systematically investigated the effect of the laser energy density on the properties of PLT thin films. The laser energy density has been varied from 0.4 to 3 J/cm(2). The surface morphology was observed to be changed from a planar structure to a columnar structure with increasing the laser energy density by scanning electron microscopy (SEM). The crystal structure of the thin films strongly depends on the laser energy density observed by X-ray diffraction (XRD). The electrical measurement indicated that the optimized laser fluence was 2.5 J/cm(2) for the fabrication of laser ablated PLT thin films which could be suitable as a dielectric capacitor film for the future DRAM applications.