Mn2+ doped Zn2SiO4 and Mg2Gd8(SiO4)(6)O-2 phosphor films were deposited on silicon and quartz glass substrates by sol-gel process (dip-coating). The variations of sol viscosity with time and film thickness with the number of layers were investigated in Zn2SiO4: Mn system. The results of XRD and IR showed that the Zn2SiO4: Mn films remained amorphous below 700 degrees C and crystallized completely around 1000 degrees C. From AFM studies, it was observed that the grains with 0.5-0.8 mu m size packed closely in Zn2SiO4: Mn films, which were uniform and crack free. The luminescence properties of Zn2SiO4: Mn films were characterized by absorption, excitation and emission spectra as well as luminescence decay. These properties were discussed in derail by a comparison with those of Mn2+ (and Pb2+)-doped Mg2Gd8(SiO4)(6)O-2 phosphor films.