Thin film photovoltaic devices based on CuInSe2 (CIS) prepared by vacuum deposition have shown efficiencies greater than 17%. However, inexpensive large-area uniform-thickness photovoltaic devices are likely to require non-vacuum deposition techniques. We discuss in this paper electrodeposition of CIS films using multilayers of binary selenides and, post-deposition selenization and thermal annealing. A sequential electrodeposition of Cu/In2Se3/Cu2-xSe on Mo-on-glass substrates was done potentiostatically at varying potentials, pH and deposition rime. We have obtained crystalline chalcopyrite CuInSe2 films with phase content greater than 95%. The surface of the films is specularly reflecting. We also present here a study of sputtered CIGS films using multilayers of binary selenides, and one-step electrodeposition of CIS films.