We have fabricated 15.4%- and 12.4%-efficient CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposition (ED) and electroless-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In. Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final film composition to CuIn1-xGaxSe2. The ED and EL device parameters are compared with those of a recent world record, an 18.8%-efficient PVD device. The tools used for comparison are current voltage. capacitance voltage and spectral response characteristics.