A Study on the Fabrication of an RTD (Resistance Temperature Detector) by Using Pt Thin Film

Jikwang Kim; Jongsung Kim; Younghwa Shin; Youngsoo Yoon

Korean Journal of Chemical Engineering, Vol.18, No.1, 61-66, January, 2001

DOI10.1007/BF02707199 Export Citation

A Study on the Fabrication of an RTD (Resistance Temperature Detector) by Using Pt Thin Film

Jikwang Kim, Jongsung Kim^†, Younghwa Shin¹, and Youngsoo Yoon²

Department of Chemical Engineering, Kyungwon University, San 65, Bokjeong-Dong, Sujeong-Ku, Sungnam 461-701, Korea
¹Department of Electrical and Electronic Engineering, Kyungwon University, San 65, Bokjeong-Dong, Sujeong-Ku, Sungnam 461-701, Korea
²Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131 Cheongrang, Seoul 130-650, Korea

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Pt thin film was deposited on alumina substrate by using DC sputter and the serpentine pattern was formed by photolithography to fabricate the resistance temperature detector (RTD). The Pt film was thermally treated and the surface structure of the film and its effect on the electrical resistance were studied. The sheet resistance of the film depends on the thickness and thermal treatment. The developing and etching conditions for serpentine patterning of the film were investigated and various RTD samples were prepared. All of the fabricated RTD's show a good linear variation of resistance with the temperature. The temperature coefficient of resistance (TCR) values of RTD's increased with decreasing film thickness, narrowing pattern line width, and increasing annealing temperature. The highest TCR value was obtained from RTD with 1 mm line width thermally treated at 700 ℃ and was 3.53x10(3) ppm/℃.

Keywords:Resistance Temperature Detector;Photolithography;Sputtering;Sensor

[References]

Baxter RD, Freud PJ, "Thin Film Resistance Thermometer Device with a Predetermined Temperature Coefficient of Resistance and its Method of Manufacture," US patent, 4375056 (1983)
Compbell SA, "The Science and Engineering of Microelectronic Fabrication," Oxford University Press, New York (1996)
Choi JW, Min J, Lee WH, Korean J. Chem. Eng., 14(2), 101 (1997)
Dauphinee TM, "Temperature, Its Measurement and Control in Science and Industry," American Institute of Physics, New York (1982)
Diehl W, Koehler W, "Resistance Element for Resistance Thermometer and Process for Its Manufacturing," US patent, 4103275 (1978)
Dziedzic A, Golonka LJ, Kozlowski J, Lieznerski BW, Nitsch K, Meas. Sci. Technol., 8, 78 (1997)
Elliott D, "Integrated Circuit Fabrication Technology," McGrow-Hill, New York (1982)
Jeon GS, Han MH, Seo G, Korean J. Chem. Eng., 16(2), 248 (1999)
Jung MK, Hong SS, Kim MH, Korean J. Chem. Eng., 15(5), 552 (1998)
Kennedy RH, Chem. Eng. Prog., 79, 54 (1983)
Lee J, "Silicon IC Fabrication Technology," 291, Daeyoung, Seoul (1991)
Lourenco MJ, Serra JM, Nunes MR, Vallera AM, Castro CA, Int. J. Thermophysics, 19, 1253 (1998)
McGee TD, "Principles and Method for Temperature Measurement," Wiley & Sons, New York (1988)
Okamura K, "Sensa Katsuyou Zue Bukku," Ohmsha, Ltd., Tokyo (1997)
Sachse HB, "Semiconducting Temperature Sensors and their Applications," John Wiley & Sons, New York (1975)
Whang K, "Sensor Technology," Kijeon, Seoul (1994)

[Related Articles]

[1] Baxter RD, Freud PJ, "Thin Film Resistance Thermometer Device with a Predetermined Temperature Coefficient of Resistance and its Method of Manufacture," US patent, 4375056 (1983)

[2] Compbell SA, "The Science and Engineering of Microelectronic Fabrication," Oxford University Press, New York (1996)

[3] Choi JW, Min J, Lee WH, Korean J. Chem. Eng., 14(2), 101 (1997)

[4] Dauphinee TM, "Temperature, Its Measurement and Control in Science and Industry," American Institute of Physics, New York (1982)

[5] Diehl W, Koehler W, "Resistance Element for Resistance Thermometer and Process for Its Manufacturing," US patent, 4103275 (1978)

[6] Dziedzic A, Golonka LJ, Kozlowski J, Lieznerski BW, Nitsch K, Meas. Sci. Technol., 8, 78 (1997)

[7] Elliott D, "Integrated Circuit Fabrication Technology," McGrow-Hill, New York (1982)

[8] Jeon GS, Han MH, Seo G, Korean J. Chem. Eng., 16(2), 248 (1999)

[9] Jung MK, Hong SS, Kim MH, Korean J. Chem. Eng., 15(5), 552 (1998)

[10] Kennedy RH, Chem. Eng. Prog., 79, 54 (1983)

[11] Lee J, "Silicon IC Fabrication Technology," 291, Daeyoung, Seoul (1991)

[12] Lourenco MJ, Serra JM, Nunes MR, Vallera AM, Castro CA, Int. J. Thermophysics, 19, 1253 (1998)

[13] McGee TD, "Principles and Method for Temperature Measurement," Wiley & Sons, New York (1988)

[14] Okamura K, "Sensa Katsuyou Zue Bukku," Ohmsha, Ltd., Tokyo (1997)

[15] Sachse HB, "Semiconducting Temperature Sensors and their Applications," John Wiley & Sons, New York (1975)

[16] Whang K, "Sensor Technology," Kijeon, Seoul (1994)