The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O-3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 degreesC exhibited excellent dielectric properties of dielectric constant, k approximate to 1,000 and dissipation factor, tan delta less than or equal to 0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47 X 10(-7) A/cm(2) at 1.25 V. (C) 2000 Elsevier Science Ltd. All rights reserved.