Recently much attention is being paid to 15R-SiC for application in MOSFET devices. But there are few reports about 15R-SiC boule growth. SIC boules have been grown by the sublimation method, and this technique has produced high quality crystals of 6H-SiC and 4H-SiC. In this paper, single crystal growth of 15R-SiC using the sublimation method on 15R-SiC and 6H-SiC substrates is discussed. The polytype of the grown crystal was determined by Raman spectroscopy. A close relationship between the substrate temperature and the 15R-SiC growth was observed. Td obtain 15R-SiC boules without inclusion of other polytypes, the substrate temperature must be kept below 2000 degreesC, The use of a 15R-SiC substrate is important for the growth of 15R-SiC boules. Growth on the (11(2) over bar 0) plane of 15R-SiC is also useful for 15R-SiC growth.