Thick 4H-SiC epitaxial layers have been grown in a vertical LPCVD reactor with a radiantly-heated susceptor. High growth rates exceeding 10 mum/hr are achieved in the reactor with mirror-like morphology. Structural properties of 4H-SiC epitaxial layers have been characterized by high-resolution XRD. Rocking curve maps taken before and after epitaxial growth show that epitaxial growth in the reactor improves greatly crystal bending and achieves narrow FWHMs of rocking curves for epitaxial layers. The electrical performance of epitaxial layers has been demonstrated on high-voltage Schottky diodes.