Homoepitaxial growth of SiC thin films by chemical vapor deposition using the single source 1,3-disilabutane has been carried out at the low temperatures of 900-1100 degreesC in an ultrahigh vacuum chamber equipped with reflection high energy electron diffraction. The structure and morphology of the films have been found to be strongly affected by the growth temperature. The films grown on on-axis 6H-SiC(0001) substrates at temperatures between 900 and 1100 degreesC had only the 3C-SiC(111) structure, but those grown on vicinal (3.5 degrees off-oriented) 6H-SiC(0001) substrates produced the 3C-SiC structure at temperatures below 1000 degreesC and the 6H-SiC structure at temperatures between 1000 and 1100 degreesC, while on vicinal (8 degrees off-oriented) 4H-SiC(0001) the films had the 4H-SiC structure even at 900 degreesC.