화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 197-200, 2000
Morphological stability of 6H-SiC epitaxial layer on hemispherical substrates prepared by chemical vapor deposition
In this study, homoepitaxial growth was carried out by atmospheric pressure CVD using a Si2Cl6+C3H8 gas system. Hemispherical substrates of 6H-SiC were used for a better understanding of the stable growth on the substrate having a miscut angle. The substrates have a miscut angle of 0 degrees to 15 degrees toward < h k i l > directions. Sixfold patterns were observed on the Si-face and the C-face after the epitaxial growth. However, the pattern direction had different orientations. On the Si-face the rough surface extended along the <1 (1) over bar 00 > direction while on the C-face the rough surface extended along the < 11 (2) over bar0 > direction. Extremely smooth surface morphology is observed when the substrate is tilted toward <1 (1) over bar 00 > direction on the C-face. The growth mechanism is discussed.