SiC epi-layer was grown by CST(Close space technique). The feature of CST is that crystal growth is carried out in quasi-equilibrium. Epi-layers were characterized by X-Ray diffraction, Raman spectroscopy and KOH etching. The crystal quality of the epi-layers was very high. After KOH etching, it was determined that micropipes in the epi-layer were caused by the substrate. The epi-layers were characterized by Raman spectroscopy. Though p-type source material was used to grow the epi-layers, the epi-layer was n-type.