A hot wall internal furnace reactor has been designed and built to meet the requirements of CVD or LPE growth of SiC on 2 inches diameter. The substrates can be heated up to 1800 degreesC, the temperature rise rate is 75 degreesC/sec between 20 and 1400 degreesC, the operating pressure is between 10(3) and a few 10(5) Pascal, and the power consumption is 4 kW at 5 10(3) Pascal at a hydrogen flow rate of 8 slm(-1). All the parameters of the 3C SiC/Si growth have not yet been optimized but uniform thickness layers with very good surface morphology and 200arcsec FWHM rocking curves have been obtained at a growth rate of 10 mu mh(-1). First results in LPE Si solvent in this reactor are encouraging.