To reproducibly obtain the single-crystalline 3C-SiC film on (100)Si, a carbonization process has been carefully investigated. Prior to carbonization, Si surfaces are covered with carbon sources by holding the temperature of the Si substrate at the range of hydrogen desorption temperature so that covering Si surface with amorphous carbon films prevents the Si atoms from blowing out from surface defects on Si and the reproducible carbonized layers were obtained. Si surfaces are covered with amorphous carbon films at 600 degreesC which are crystallized by out-diffusion of Si atoms at the carbonization temperature, with increasing the carbonization time. At substrate temperatures below 1000 degreesC the substrate bias is an effective tool for supplying carbon sources.