The surface structures of both cleaned and etched 6H-SiC(0001)(Si) wafers have been investigated using the photo emission electron microscope (PEEM). In the first study, the SIC wafers were exposed to two different cleaning processes to obtain a (root3 x root3)R30 degrees and a 3 x 3 reconstructed surface. The PEEM images were obtained with a mercury are lamp as the photon source and revealed that the clean reconstructed surfaces were non-uniform. In the second study, characterization of a hydrogen etched surface using the PEEM with the Duke University free electron laser (DFEL) as the photon source revealed a high density of dislocations and a stepped surface structure.