We have studied clean surfaces of 6H(4H)SiC(0001)Si and C and metal(film)SiC(substrate) contact systems, where noble and transition metals are adopted. Heat treated SiC surfaces in ultra high vacuum(UHV) has shown surface super structures depending on temperature. In the case of metal deposition on SiC substrates, it has been clarified that deposited metal atoms form islands in the initial stage. Soft X-ray emission spectroscopy (SXES) study has elucidated the fact that there is a Ni2Si buried interface layer for a Ni(film)SiC(substrate) contact heat treated at 600-800 degreesC.