화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 445-448, 2000
Analysis on the formation and elimination of filamentary and planar voids in silicon carbide bulk crystals
The closing of micropipes during SiC solution growth is frequently observed. This closing is investigated theoretically showing that both mechanical and surface energy are similar for the open and closed defect geometry. Thus capillary action should be the dominating mechanism for the elimination of micropipes during SiC liquid phase growth. A model for planar/macrodefect formation is presented giving indications that these defects are a result of negative crystal growth.