Pores in 4H porous SiC were found to propagate first nearly parallel with the basal plane and then gradually change plane of propagation from, e.g., (1 (1) over bar 04) to (1 (1) over bar 03) and (1 (1) over bar 02) etc. A disordered phase is formed at the interface between the pores and the crystalline SiC. Optical analysis of this phase reveals a more dielectric like nature of the material compared to crystalline SiC. The measured electrical resistivity at 296 K and 347 K were 2.9 x 10(8) . cm and 9.2 x 10(7) . cm, respectively.