We report on 3C-SiC deposited on < 100 > Si and SOI wafers using hexamethyldisilane (HMDS) as unique precursor gas. The growth temperature was 1350 degreesC and the layer thicknesses similar to 4 mum. The layer properties were systematically checked using AFM, IR reflectivity, DDX, Low-Temperature Photoluminescence and micro-Raman spectroscopy. We compared with 3C-SiC films grown under the same conditions, using standard precursors.