Raman scattering spectra for p-type 6H-SiC bulk crystals have been measured in detail for various carrier concentrations. The spectra show very different features as compared with those for n-type materials: (i) The LO-phonon mode shows no frequency shift due to coupling with plasma oscillation of free carriers. (ii) A continuum band due to inter-valence-band transition clearly appears in the low frequency region, together with Fano interference features on sharp phonon lines. It is proposed that the continuum-band intensity and the Fano interference parameters can be conveniently used as a measure of free carrier concentration in p-type SiC.