Electronic Raman scattering from nitrogen defect levels in 4H-SiC and 6H-SiC has been seen to be significantly enhanced with excitation by red (633 nm, 1.98 eV) or near infrared (785 nm, 1.58 eV) laser light at room temperature. Peaks observed in the spectra of 4H-SiC are seen to shift to lower frequency with increasing nominal doping concentration. We have used confocal Raman microscopy to investigate Lateral Epitaxial Overgrowth (LEO) of SIG. Epitaxial overgrowth on a 4H-SiC substrate covered with a graphite mask with circular holes of 70 mum has been observed to produce hexagonal and misshapen hexagonal mesa island structures with some mixed polytype structure, especially at the edges.