Time- and spectrally resolved electron-hole (e-h) recombination radiation from forward-biased kV-class 4H-SiC p(+)n(-)n(+) structures is studied by combining an intensified gated charge couple device (ICCD) camera with backside and cross-sectional emission microscopy techniques. We demonstrate the capability of this method to visualize, spectrally analyze and map intrinsic and processing-induced structural defects in the active region of devices. Moreover, carrier diffusivity and lifetime parameters can be readily obtained by analyzing the spatial distribution and dynamics of injected carriers.