3C-SiC epitaxial layers were grown on Si substrates using Si-2(CH3)(6) as Si and C source material in place of SiH4+C3H8 system. Electrical properties of 3C-SiC layers were investigated by Hall-effect measurements at temperatures between 85K and 500K. Room temperature, carrier concentration decreased, and the mobility increased as the SiC film thickness increased. The ionization energies of several kinds of donors obtained from the temperature dependence of carrier concentration are 7-14meV, 46-54meV, 97-120meV. Electrical properties obtained from LO-phonon-plasmon-coupled modes of Raman spectra were compared with results obtained by Hall measurements. From Raman spectra, it was determined that tensile stress still exists in the SiC film to a thickness of at least 32 mum.