6H-SiC samples were He+-implanted with different fluences and annealed at different temperatures (700 degreesC to 1700 degreesC) to generate intrinsic-related defect centers. Deep level transient spectroscopy (DLTS) and low temperature photoluminescence (LTPL) investigations were conducted on identical samples. The correlation of corresponding peak heights (defect concentrations) in DLTS and LTPL spectra as a function of the implanted He+ fluence and of the annealing temperature leads to the conclusion that the E-1/E-2-center observed in DLTS spectra and the D-I defect (L-v,-lines, v=1, 2, 3) observed in LTPL spectra are caused by the same defect center. A corresponding identity could be established for the Z(1)/Z(2)-center (DLTS) and the defect which is responsible for the PL line at 4349 Angstrom.