In this paper we present an overview of the different shallow and deep acceptor centers in Be-9-doped 6H-SiC. The g-, hyperfine and quadrupole tensors of up to eight different centers are identified. Their geometric and electronic structure resembles that of the B-related centers in 6H-SiC. Three of them showed the behavior characteristic of shallow B centers (sB), five of them that of deep centers (dB). Two of the deep centers have not been found in B-doped 6H-SiC.