P-type 6H-SiC has been transmuted to n-type by neutron transmutation. Samples were irradiated by neutrons with the fluence of 10(17)similar to 10(19)cm(-2), and were annealed at 140 similar to 2000 degreesC for 30min in Ar. In LTPL spectra after 2000 degreesC-annealing, free exciton peaks appeared, indicating that good lattice recovery was achieved. I-V and C-V measurements showed the transmutation from p-type 6H-SiC to n-type. In deep level analyses, there were two electron traps located at E-c-0.51eV and E-c-0.61eV.