We irradiated 4H and 6H SiC samples with various neutron (further: N) fluences of different energetic distributions. Then the samples were sucessively annealed between 600 degreesC and 1850 degreesC and thereafter characterized by Fourier-Transform-Infra-Red-spectroscopy (FTIR), Low-Temperature-Photo-Luminescence (LTPL), Hall-effect, I-V, C-V characteristcs were carried out. It is shown that fast neutrons (FN) produce uppermost defects and samples irradiated with nearby thermal fluences show approximately the same behaviour after annealing at 1500-1650 degreesC as "as-grown" samples, Whereas one has to consider the surface destruction due to annealing processes.