XeCl excimer laser annealing of ion-implanted 6H-SiC was carried out. Laser annealed SiC was characterized by Rutherford backscattering, secondary ion mass spectroscopy (SIMS), electrical conductivity and photoluminescence. Laser irradiation reduced the chi values and increased electrical conductivity. The activation efficiency of the laser-annealed Al+ implanted SiC was estimated to be about 0.1%. SIMS results suggest that SiC substrates were not melted by laser irradiation and that the laser annealing effect proceeded in solid phase.