We report an electrical investigation of high dose AI and AVC ion-implantation in 4H-SiC. We show that, using a reasonably high temperature annealing (1670 degreesC) for 10 minutes, low resistivity can be obtained. Our best result is similar to 95 m Omega .cm at 300 K. We also verify the electrical activation enhancement, already reported when using Al and C co-doping. The lowest specific resistance is similar to 2 m Omega .cm(2) for a PN junction realized by Al implantation.