The structural and electrical properties of NiSi2 ohmic contact formed on n-type 6H-SiC have been investigated using Rutherford backscattering spectrometry(RBS), X-ray photoelectron spectrometry(XPS), and I-V characterization. The NiSi2 films on n-type (0001)-oriented SiC substrates with the net doping concentration of 1 x 10(18) and 3 x 10(16) /cm(3) are formed by annealing the deposited Ni and Si films, whose thicknesses are designed to produce the stoichiometric NiSi, alloy, at 900 degreesC for 10 min in Ar+5%H-2 now. RES and XPS investigations reveal that the composition of the formed ahoy corresponds to the stoichiometry of NiSi2 and there is no reaction of the deposited film and the substrate. The I-V characterization shows that the formed NiSi2 film is a good ohmic contact for n-type SiC.