Etch rate and surface morphology of 4H-SiC by hydrogen etching at low pressure and at high temperature are investigated. Smooth and specular pre-growth surface can be obtained by etching at around 20 Torr and at temperatures ranged from 1600 to 1850 degreesC. Higher etch rate is obtained at low pressures. Protrusions, which have a hexagonal feature, are observed at 2 Torr. Triangular shaped defects extended in the direction of <1<(1)over bar>00> are also observed at atmospheric pressure.